Peng Yang | Electronic Devices | Best Researcher Award

Dr. Peng Yang| Electronic Devices | Best Researcher Award

student at National University of Defense Technology, China

Peng Yang is a dedicated researcher pursuing a Ph.D. at the National University of Defense Technology, focusing on cutting-edge advancements in electronic science and technology. With an M.S. in Microelectronics and Solid-State Electronics from Sun Yat-Sen University, Peng has consistently demonstrated excellence in the fields of ferroelectric transistors, neuromorphic computing, optoelectronic devices, and biosensing. His passion lies in bridging theoretical knowledge with practical applications, driving innovation in emerging electronic technologies.

Publication Profile

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πŸ“š Education

πŸŽ“ M.S. in Microelectronics and Solid-State Electronics – Sun Yat-Sen University, Guangzhou, 2020πŸŽ“ Ph.D. Candidate in Electronic Science and Technology – National University of Defense Technology, Changsha (ongoing)
Peng’s academic journey reflects a strong foundation in microelectronics and an ongoing pursuit of deeper expertise in advanced electronic systems.

πŸ’Ό Experience

πŸ”¬ Ph.D. Researcher – National University of Defense Technology (2020–Present)πŸ“‘ Graduate Research Assistant – Sun Yat-Sen University (2018–2020)
Peng’s hands-on experience spans across semiconductor device design, fabrication, and innovative electronic component research.

πŸ† Awards and Honors 

πŸ… Best Paper Award – International Conference on Advanced Electronics (2022)🌟 National Scholarship for Academic Excellence (2019)πŸ† Research Excellence Award – Sun Yat-Sen University (2020)
Peng’s dedication to his field is recognized by prestigious awards, celebrating his contributions and academic achievements.

πŸ” Research Focus 

πŸ”‹ Ferroelectric Transistors🧠 Neuromorphic ComputingπŸ’‘ Optoelectronic Devices🩺 Biosensing Technologies
Peng Yang’s research drives the development of next-generation electronics, focusing on technologies that blend computational power with innovative sensing capabilities.

Publications πŸ“–

Multistates and Ultralow-Power Ferroelectric Tunnel Junction by Inserting Alβ‚‚O₃ Interlayer
πŸ“… IEEE Transactions on Electron Devices, 2025-01
πŸ”— DOI: 10.1109/TED.2024.3503533
πŸ‘₯ Contributors: Yefan Zhang, Shihao Yu, Peng Yang, Xiaopeng Luo, Hui Xu, Xi Wang, Haijun Liu, Sen Liu, Qingjiang Li

Fully Electrically Modulated Hetero-Synapses With Lateral Multigate Ferroelectric Thin Film Transistor
πŸ“… IEEE Transactions on Electron Devices, 2024
πŸ”— DOI: 10.1109/ted.2024.3456775
πŸ‘₯ Contributors: Peng Yang, Hui Xu, Shihao Yu, Yang Liu, Bing Song, Haijun Liu, Sen Liu, Qingjiang Li

The Optical-Electronic Integrated Spiking Neurons Based on Antiferroelectric Thin-Film Transistors
πŸ“… IEEE Transactions on Electron Devices, 2024
πŸ”— DOI: 10.1109/ted.2024.3450440
πŸ‘₯ Contributors: Luo Xiaopeng, Peng Yang, Yu Shihao, Xu Guo, Yefan Zhang, Yang Liu, Yi Sun, Yinan Wang, Sen Liu, Qingjiang Li

Tailoring Dynamic Synaptic Plasticity in FeTFT Optoelectronic Synapse for Associative Learning
πŸ“… Advanced Electronic Materials, 2024-12-30
πŸ”— DOI: 10.1002/aelm.202400732
πŸ‘₯ Contributors: Peng Yang, Hui Xu, Xiaopeng Luo, Shihao Yu, Yang Liu, Yefan Zhang, Xu Guo, Bing Song, Zhiwei Li, Sen Liu

Inhibiting the Imprint Effect of the TiN/HZO/TiN Ferroelectric Capacitor by Introducing a Protective HfO2 Layer
πŸ“… AIP Advances, 2024-08-01
πŸ”— DOI: 10.1063/5.0222725
πŸ‘₯ Contributors: Yu Shihao, Yefan Zhang, Peng Yang, Xiaopeng Luo, Zhenyuan Sun, Haijun Liu, Sen Liu

Multistate Capability Improvement of BEOL Compatible FeFET by Introducing an Al2O3 Interlayer
πŸ“… IEEE Transactions on Electron Devices, 2023-11
πŸ”— DOI: 10.1109/ted.2023.3309776
πŸ‘₯ Contributors: Yu Shihao, Qin Wang, Yefan Zhang, Peng Yang, Xiaopeng Luo, Haijun Liu, Changlin Chen, Qingjiang Li, Sen Liu

A Large Memory Window and Low Power Consumption Self‐Rectifying Memristor for Electronic Synapse
πŸ“… Electronics Letters, 2023-01
πŸ”— DOI: 10.1049/ell2.12717
πŸ‘₯ Contributors: Qingjiang Li, Shihao Yu, Peng Yang, Qin Wang, Sen Liu

Improved Symmetry of Ferroelectric Switching in HZO Based MFM Capacitors Enabled by High Pressure Annealing
πŸ“… IEEE Journal of the Electron Devices Society, 2022
πŸ”— DOI: 10.1109/jeds.2022.3221727
πŸ‘₯ Contributors: Qin Wang, Yefan Zhang, Peng Yang, Rongrong Cao, Haijun Liu, Hui Xu, Sen Liu, Qingjiang Li

πŸ”Ή Conclusion

Peng Yang is a strong candidate for a Best Researcher Award, given his contributions to cutting-edge technologies and an impressive publication record. While his collaborative achievements stand out, focusing on individual accolades, project leadership, and public engagement will further bolster his eligibility. Overall, his research trajectory reflects immense promise, positioning him as a rising star in the field of microelectronics and solid-state devices.