Prof. Dr. Ikai Lo | Optoelectronic Applications | Best Researcher Award
Distinguished Prof. (Emeritus) at National Sun Yat-Sen UniversityThis link is disable.ย Taiwan
Dr. Ikai Lo is a Distinguished Emeritus Professor of Physics at National Sun Yat-Sen University, Kaohsiung, Taiwan. With a strong background in physics, Dr. Lo has made significant contributions to the field of semiconductor physics and nanotechnology. He has published over 130 SCI papers and holds 20 invention patents. Dr. Lo’s expertise and leadership have earned him numerous awards and recognition within the scientific community. ๐ก
Profile
๐ Education
Dr. Ikai Lo received his BS degree in Physics from National Tsing Hua University, Taiwan in 1980. He then pursued his Ph.D. in Physics at the State University of New York at Buffalo, USA, which he completed in 1989. During his academic journey, Dr. Lo developed a strong foundation in physics and laid the groundwork for his future research endeavors. ๐
๐จโ๐ฌ Experience
Dr. Ikai Lo served as a National Research Council postdoctoral fellow at the Air Force Research Laboratory, Wright-Patterson Air Force Base, USA from 1989 to 1993. He joined the Physics Department at National Sun Yat-Sen University in 1989 and held various leadership positions, including Chairman of Physics Department, Dean of Science, and Director of the Center for Nanoscience and Nanotechnology. Dr. Lo’s administrative and research experience has made him a respected figure in his field. ๐
๐ Research Interest
– Materials for quantum science and engineering โ๏ธ– Topological properties ๐– Sensors ๐ฐ๏ธ– Nanofabrication (MBE and MOCVD) ๐– Device processing and performance (MOSFETs, FinFETs) ๐– Micro- and nanoscale heat transfer and thermal energy conversion โ๏ธ
Awards and Honors ๐
๐ Publicationsย
1. “Pressure dependence of the de Haas-van Alphen effect in ZrZn2: deviations from the Stoner-Wohlfarth model” ๐
2. “Two dimensional electron gas in GaAs/Al0.3Ga0.7As heterostructures: effective mass” ๐ป
3. “Negative persistent photoconductivity in the Al0.6Ga0.4Sb/InAs single quantum wells” ๐
4. “Effective mass of the 2-dimensional electron gas in an Al0.6Ga0.4Sb/InAs single quantum wells” ๐ค
5. “Shubnikov-de Haas studies of negative persistent photoconductivity in AlGaSb/InAs quantum wells” ๐
6. “Spin-splitting and effective mass of the 2-dimensional electron gas in an Al0.6Ga0.4Sb/InAs single quantum wells” ๐ฎ
7. “Effect of Al composition on the deep level donors of AlXGa1-XSb/InAs single quantum wells” โ๏ธ
8. “The Wannier-Stark quantization by internal field in the HgTe/CdTe superlattice” ๐
9. “Magnetic-field-induced free electron and hole recombination in the AIXGa1-XSb/InAs quantum wells” ๐
10. “The negative persistent photoconductivity in the deep quantum wells” ๐
11. “Negative persistent photo effect on cyclotron resonance in InAs/Al0.5Ga0.5Sb quantum wells” ๐
12. “Electronic properties of AlGaSb/InAs quantum wells” ๐ป
13. “Observation of negative persistent photoconductivity effect in the In0.25Ga0.75Sb/InAs quantum wells” ๐
14. “Interface roughness scattering in thin undoped GaInP/GaAs quantum wells” ๐
15. “Cyclotron resonance oscillations in a two-dimensional electron-hole system” ๐
16. “A Shubnikov-de Haas study of tilted magnetic field in the HgTe/CdTe superlattice” ๐
17. “A study of magnetic-field-induced semimetal to semiconductor transition in the AlXGa1-XSb/InAs quantum wells” ๐
18. “Magneto-optical study of negative persistent photo effect in InAs/Al0.5Ga0.5Sb quantum wells”
Conclusion
Given Dr. Ikai Lo’s impressive academic career, research contributions, leadership experience, and awards, he is highly suitable for the Best Researcher Award. His dedication to the scientific community and his expertise in semiconductor physics and nanotechnology make him an outstanding candidate for this recognition. With some focus on interdisciplinary collaboration, translation, and mentorship, Dr. Lo’s impact could be further amplified.