Effect of Distributed Bragg Reflectors on Optoelectronic Characteristics of GaN-based Flip-Chip Light-Emitting Diodes
Published in Semiconductor Science and Technology, this study explores the impact of distributed Bragg reflectors on the performance of GaN-based flip-chip LEDs. Sun, Y., Shi, L., Cui, Y., Zhuang, J., and Zhou, S. present findings that could lead to significant advancements in LED technology. [No citations available]
Enhanced Efficiency of Deep Ultraviolet Light-Emitting Diodes Utilizing Full-Coverage Al Reflector and Highly Reflective Ni/Rh P-Electrode
Lv, Z., Liao, Z., and Zhou, S. investigate the utilization of full-coverage Al reflectors and highly reflective Ni/Rh p-electrodes to enhance the efficiency of deep UV LEDs. Published in Semiconductor Science and Technology. [No citations available]
Recent Progress in III-Nitride Tunnel Junction Light-Emitting Diodes
In this review published in Physica Status Solidi – Rapid Research Letters, Zhou, Q., Song, J., Sun, K., Liu, S., and Zhou, S. provide insights into the recent progress made in III-nitride tunnel junction LEDs. [No citations available]
Contact Engineering of III-Nitrides and Metal Schemes toward Efficient Deep-Ultraviolet Light-Emitting Diodes
Zhao, X., Sun, K., Lv, Z., Liu, S., and Zhou, S. delve into contact engineering strategies for efficient deep-UV LEDs in ACS Applied Materials and Interfaces. [1 citation]
High-Power AlGaN-Based Ultrathin Tunneling Junction Deep Ultraviolet Light-Emitting Diodes
Zhou, S., Liao, Z., Sun, K., Lv, Z., and Qi, S. present research on high-power AlGaN-based ultrathin tunneling junction deep UV LEDs, published in Laser and Photonics Reviews. [19 citations]