Prof. Sanghun Jeon | Artificial Nerve System | Outstanding Scientist Award

Prof. Sanghun Jeon | Artificial Nerve System | Outstanding Scientist Award

Prof. Sanghun Jeon, Korea Advanced Institute of Science and Technology, South Korea

Prof. Sanghun Jeon is academic and researcher in the field of renewable energy, holds a PhD in Bio systems Engineering from Kangwon National University, South Korea. His academic journey has been marked by a profound dedication to advancing solar energy technologies, specifically in solar thermal harvesting and its integration into agricultural and architectural applications.

 

Professional Profiles:

Google scholar

Education 🎓

Gwangju Institute of Science and Technology (GIST)
Ph.D. degree in Electronic Materials Program (with Best Paper Award Honors), Feb. 2003
Dissertation Title: Studies of the electrical and physical characteristics of ultrathin high k gate dielectrics for metal-oxide-semiconductor (MOS) device applications

Experience 🧑‍🔬

KAIST (Google Scholar: In total, 12081 citations, h-index 53. Since 2019, 6343 citations, h-index 38)
Feb. 2018 – Present
Tenured Full Professor, School of Electrical EngineeringLaunched research efforts in AI semiconductors using functional ferroelectric materials and devices, IoT sensors, and stretchable displays.KOREA University (with Seoktap Research Awards)
Mar. 2013 – Feb. 2018
Associate Professor, Department of Applied PhysicsLaunched research efforts in wearable sensors, multimodal sensors, hafnia ferroelectric 1T DRAM, and hafnia ferroelectric tunnel junctions for logic-in-memory device applications.SAMSUNG ELECTRONICS and SAMSUNG Advanced Institute of Technology
Mar. 2003 – Feb. 2013
Senior and Principal Research Staff MemberPerformed research on oxide thin-film transistors for CMOS image sensors, displays, photo-sensors, and high-power devices.Process and device engineer for graphene, 3D transistors, and hybrid semiconductor devices.Developed the world’s first 32Gb NAND Flash Technology (4X nm generation, 2006) and 8Gb & 16Gb NAND Flash Technology (6Xnm generation, 2005) using charge trap flash memory devices.

Research Interests 🔍

NAND Flash with Ferroelectric MaterialsHybrid NAND Flash with Negative Capacitance Ferroelectric MaterialsHigh Dielectric Constant Morphotropic Phase Materials for DRAM CapacitorsHfO2 1T DRAM Nonvolatile Logic Device for Deep Learning ApplicationsComputing-in-Memory Hardware: 3-Terminal Device and Architecture for Deep Neural NetworksFerroelectric Tunnel JunctionsTextile Sensors for Wearable/Flexible ElectronicsAI-Inspired Tactile Sensing Applications with Machine Learning Algorithms

Academic Contribution 📚

IEEE Senior MemberVice Chair of Advanced and Emerging Memories / New Applications in International Conference on Solid State Device and Materials (SSDM) (2015 – Present)Associate Editor of Springer Nanoconvergence (2018 – Present)Associate Editor of IEEE/OSA Journal of Display Technology (2013 – 2016)Organizing Committee and Track Chair of IEEE FLEPS (2021 – Present)Public Chair of IEEE FLEPS (2022)Focused Session Chair of IEEE FLEPS (2023 – 2024)Editorial Board Member of Nature Publication Group Scientific Reports (2015 – Present)Editorial Board Member of IEEE Journal on Flexible Electronics (2022 – Present)

Awards 🏆

Springer Nano Convergence Contribution Award (2022)KAIST Best Lecturer Award (2022)SK Hynix IDEA Silver Award (2019)KOREA University SEOKTAP Research Award (2018)Samsung Future Technology Foundation Research Grant (2017)IAAM Young Scientist Award Medal (2016)IMID Best Paper Award (2016)Samsung Paper Champion Award (2013)Samsung Advanced Institute of Technology Innovation Award (2012)Samsung Best Paper Award (2011)Samsung Group Grand Award (2006)Young Researcher Award (2002)

📖 Publications Top Note :

Highly Stretchable Resistive Pressure Sensors Using a Conductive Elastomeric Composite on a Micropyramid Array

CL Choong, MB Shim, BS Lee, S Jeon, DS Ko, TH Kang, J Bae, SH Lee, …
Journal: Advanced Materials
Citations: 1221
Year: 2014

Highly Stretchable Electric Circuits from a Composite Material of Silver Nanoparticles and Elastomeric Fibres

M Park, J Im, M Shin, Y Min, J Park, H Cho, S Park, MB Shim, S Jeon, …
Journal: Nature Nanotechnology
Citations: 943
Year: 2012

High Performance Amorphous Oxide Thin Film Transistors with Self-Aligned Top-Gate Structure

JC Park, SW Kim, SI Kim, H Yin, JH Hur, SH Jeon, SH Park, IH Song, …
Journal: IEEE International Electron Devices Meeting (IEDM)
Citations: 623
Year: 2009

Gated Three-Terminal Device Architecture to Eliminate Persistent Photoconductivity in Oxide Semiconductor Photosensor Arrays

S Jeon, SE Ahn, I Song, CJ Kim, UI Chung, E Lee, I Yoo, A Nathan, S Lee, …
Journal: Nature Materials
Citations: 480
Year: 2012

A Flexible Bimodal Sensor Array for Simultaneous Sensing of Pressure and Temperature

NT Tien, S Jeon, DI Kim, TQ Trung, M Jang, BU Hwang, KE Byun, J Bae, …
Journal: Advanced Materials
Citations: 436
Year: 2014

Trap-Limited and Percolation Conduction Mechanisms in Amorphous Oxide Semiconductor Thin Film Transistors

S Lee, K Ghaffarzadeh, A Nathan, J Robertson, S Jeon, C Kim, IH Song, …
Journal: Applied Physics Letters
Citations: 306
Year: 2011

HfZrOx-Based Ferroelectric Synapse Device with 32 Levels of Conductance States for Neuromorphic Applications

S Oh, T Kim, M Kwak, J Song, J Woo, S Jeon, IK Yoo, H Hwang
Journal: IEEE Electron Device Letters
Citations: 246
Year: 2017

Effect of Hygroscopic Nature on the Electrical Characteristics of Lanthanide Oxides

S Jeon, H Hwang
Journal: Journal of Applied Physics
Citations: 190
Year: 2003

Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays

SE Ahn, I Song, S Jeon, YW Jeon, Y Kim, C Kim, B Ryu, JH Lee, A Nathan, …
Journal: Advanced Materials
Citations: 166
Year: 2012

Amorphous Oxide Semiconductor TFTs for Displays and Imaging

A Nathan, S Lee, S Jeon, J Robertson
Journal: Journal of Display Technology
Citations: 165
Year: 2014

Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires Toward Novel Nonvolatile Memory

Y Yang, X Peng, HS Kim, T Kim, S Jeon, HK Kang, W Choi, J Song, …
Journal: Nano Letters
Citations: 164
Year: 2015

Persistent Photoconductivity in Hf–In–Zn–O Thin Film Transistors

K Ghaffarzadeh, A Nathan, J Robertson, S Kim, S Jeon, C Kim, UI Chung, …
Journal: Applied Physics Letters
Citations: 162
Year: 2010

The Effect of the Bottom Electrode on Ferroelectric Tunnel Junctions Based on CMOS-Compatible HfO2

Y Goh, S Jeon
Journal: Nanotechnology
Citations: 152
Year: 2018

Instability in Threshold Voltage and Subthreshold Behavior in Hf–In–Zn–O Thin Film Transistors Induced by Bias-and Light-Stress

K Ghaffarzadeh, A Nathan, J Robertson, S Kim, S Jeon, C Kim, UI Chung, …
Journal: Applied Physics Letters
Citations: 133
Year: 2010

Oxygen Vacancy Control as a Strategy to Achieve Highly Reliable Hafnia Ferroelectrics Using Oxide Electrode

Y Goh, SH Cho, SHK Park, S Jeon
Journal: Nanoscale
Citations: 123
Year: 2020

Non-Volatile Semiconductor Memory Device with Alternative Metal Gate Material

SH Jeon, J Han, C Kim
Journal: US Patent 7,391,075
Citations: 122
Year: 2008

Electrical Characteristics of Prepared by Annealing of

S Jeon, CJ Choi, TY Seong, H Hwang
Journal: Applied Physics Letters
Citations: 119
Year: 2001

180nm Gate Length Amorphous InGaZnO Thin Film Transistor for High Density Image Sensor Applications

S Jeon, S Park, I Song, JH Hur, J Park, S Kim, S Kim, H Yin, E Lee, S Ahn, …
Journal: International Electron Devices Meeting
Citations: 116
Year: 2010

Transparent Semiconducting Oxide Technology for Touch Free Interactive Flexible Displays

S Lee, S Jeon, R Chaji, A Nathan
Journal: Proceedings of the IEEE
Citations: 114
Year: 2015

Excellent Electrical Characteristics of Lanthanide (Pr, Nd, Sm, Gd, and Dy) Oxide and Lanthanide-Doped Oxide for MOS Gate Dielectric Applications

S Jeon, K Im, H Yang, H Lee, H Sim, S Choi, T Jang, H Hwang
Journal: International Electron Devices Meeting
Citations: 114
Year: 2001