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Dr. Ningtao Liu | Wideband-gap semiconductors | Best Researcher Award

 Dr. Chinese Academy of Sciences, China

Ningtao Liu, a postdoctoral researcher at the Ningbo Institute of Materials Technology and Engineering, specializes in wideband-gap oxide semiconductor thin films and microelectronic devices. He has extensive experience in the epitaxial growth of ferroelectric and piezoelectric films and the modulation of semiconductor devices’ optoelectronic properties. Liu’s recent work focuses on enhancing epitaxial technology and carrier transport regulation of gallium oxide for high-performance photodetectors and power devices. He has previously worked as a senior engineer at TCL China Star Optoelectronics Technology and holds a Ph.D. from the Shanghai Institute of Ceramics. Liu has numerous publications as the first and corresponding author.

 

Professional Profiles:

🎓 Education

Aug. 2020 – Current: Postdoctoral Researcher at Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
Field of research: Electronics in the field of wide-bandgap oxidesJul. 2019 – Aug. 2020: Senior Engineer at TCL China Star Optoelectronics Technology (TCL CSOT)
Field of research: Materials and devices for OLED and Micro LEDSep. 2014 – Jul. 2019: Ph.D. at Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai
Field of research: Ferroelectric and piezoelectric materials and devicesSep. 2010 – Jul. 2014: B.S. in Inorganic Non-metal Material Engineering at Wuhan University of Science and Technology, School of Materials and Metallurgy

🔬 Research Interests

I am deeply passionate about designing and developing wideband-gap oxide semiconductor thin films and semiconductor microelectronic devices. My expertise includes the growth of heterogeneous epitaxial growth of ferroelectric and piezoelectric films, and the characterization and modulation of optoelectronic properties of semiconductor devices. Recently, I have focused on enhancing high-quality epitaxial technology and carrier transport regulation of gallium oxide (Ga2O3) and other wide-band semiconductor thin films, aiming to advance high-performance photodetectors and power devices.

✍️Publications Top Note :

Enhanced energy storage properties in sodium bismuth titanate-based ceramics for dielectric capacitor applications
Y Wu, Y Fan, N Liu, P Peng, M Zhou, S Yan, F Cao, X Dong, G Wang
Journal of Materials Chemistry C 7 (21), 6222-6230, 2019.
Citations: 240

Excellent comprehensive energy storage properties of novel lead-free NaNbO₃-based ceramics for dielectric capacitor applications
J Ye, G Wang, M Zhou, N Liu, X Chen, S Li, F Cao, X Dong
Journal of Materials Chemistry C 7 (19), 5639-5645, 2019.
Citations: 237

Designing lead-free bismuth ferrite-based ceramics learning from relaxor ferroelectric behavior for simultaneous high energy density and efficiency under low electric field
N Liu, R Liang, Z Zhou, X Dong
Journal of Materials Chemistry C 6 (38), 10211-10217, 2018.
Citations: 233

Significantly enhanced energy storage performance of rare-earth-modified silver niobate lead-free antiferroelectric ceramics via local chemical pressure tailoring
S Li, H Nie, G Wang, C Xu, N Liu, M Zhou, F Cao, X Dong
Journal of Materials Chemistry C 7 (6), 1551-1560, 2019.
Citations: 152

Novel bismuth ferrite-based lead-free ceramics with high energy and power density
N Liu, R Liang, X Zhao, C Xu, Z Zhou, X Dong
Journal of the American Ceramic Society, 2018.
Citations: 99

Ultrahigh recoverable energy storage density and efficiency in barium strontium titanate-based lead-free relaxor ferroelectric ceramics
W Huang, Y Chen, X Li, G Wang, N Liu, S Li, MX Zhou, X Dong
Applied Physics Letters 113 (20), 2018.
Citations: 82

Novel AgNbO₃-based lead-free ceramics featuring excellent pyroelectric properties for infrared detecting and energy-harvesting applications via antiferroelectric/ferroelectric modulation
S Li, H Nie, G Wang, N Liu, M Zhou, F Cao, X Dong
Journal of Materials Chemistry C 7 (15), 4403-4414, 2019.
Citations: 54

Significantly improved energy storage properties and cycling stability in La-doped PbZrO₃ antiferroelectric thin films by chemical pressure tailoring
H Cai, S Yan, M Zhou, N Liu, J Ye, S Li, F Cao, X Dong, G Wang
Journal of the European Ceramic Society 39 (15), 4761-4769, 2019.
Citations: 49

Colossal negative electrocaloric effects in lead-free bismuth ferrite-based bulk ferroelectric perovskite for solid-state refrigeration
N Liu, R Liang, G Zhang, Z Zhou, S Yan, X Li, X Dong
Journal of Materials Chemistry C 6 (39), 10415-10421, 2018.
Citations: 39

Tailoring domain structure through manganese to modify the ferroelectricity, strain and magnetic properties of lead-free BiFeO₃-based multiferroic ceramics
N Liu, R Liang, X Zhao, Y Zhang, Z Zhou, X Tang, X Dong
Journal of Alloys and Compounds 740, 470-476, 2018.
Citations: 36

Fast-response amorphous Ga₂O₃ solar-blind ultraviolet photodetectors tuned by a polar AlN template
N Liu, T Zhang, L Chen, J Zhang, S Hu, W Guo, W Zhang, J Ye
IEEE Electron Device Letters 43 (1), 68-71, 2021.
Citations: 32

Room temperature fabrication and post-annealing treatment of amorphous Ga₂O₃ photodetectors for deep-ultraviolet light detection
T Zhang, D Guan, N Liu, J Zhang, J Zhang, C Guo, M Qiu, Q Yuan
Applied Physics Express 15 (2), 022007, 2022.
Citations: 31

Large remanent polarization and enhanced magnetic properties in non-quenched Bi(Fe,Ga)O₃-(Ba,Ca)(Zr,Ti)O₃ multiferroic ceramics
N Liu, R Liang, Z Liu, Z Zhou, C Xu, G Wang, X Dong
Applied Physics Letters 110 (11), 112902, 2017.
Citations: 20

High-temperature deep ultraviolet photodetector based on a crystalline Ga₂O₃-diamond heterostructure
W Wang, Q Yuan, D Han, J Sun, N Liu, S Hu, C Liu, W Zhang, J Ye
IEEE Electron Device Letters 43 (12), 2121-2124, 2022.
Citations: 16

Ningtao Liu | Wideband-gap semiconductors | Best Researcher Award

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